Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...

While many research efforts are underway to develop active devices that can function in the challenging terahertz spectrum, others are leapfrogging to try to get some devices operate into the ...

Researchers have reported a black phosphorus transistor that can be used as an alternative ultra-low power switch. A research team developed a thickness-controlled black phosphorous tunnel ...

A new study represents a significant advance in topological transistors and beyond-CMOS electronics. First time that the topological state in a topological insulator has been switched on and off using ...

Efficient Power Conversion Corporation has extended the company's family of high-speed, high performance transistors with the EPC8000 family of products. Cutting new ground for power transistors, the ...

What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...

Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...

How many remote controls do you have in your home? Don’t you wish all these things were better integrated somehow, or that you could add remote control functionality to a random device? It’s a common ...