EDN

Infineon : RF power transistors target 2.5 to 2.7 GHz WiMAX

Infineon Technologies AG has announced two new LDMOS RF power transistors targeting wireless infrastructure applications, such as WiMAX, in the 2.5 GHz-to-2.7 GHz frequency band. These products, which ...
EDN

New Infineon LDMOS RF Power Transistors Target 2.5 to 2.7 GHz WiMAX, Wireless Broadband Applications with Industry-Best Peak Output Power

New Infineon LDMOS RF Power Transistors Target 2.5 to 2.7 GHz WiMAX, Wireless Broadband Applications with Industry-Best Peak Output Power Infineon Technologies AG (IFX: FSE, NYSE), a leading supplier ...
Hosted on MSN

Researchers achieve record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiers

Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium nitride (GaN) MOSHEMT (metal-oxide-semiconductor high-electron-mobility ...
Electronic Design

Cool RF Transistors Pack A Mean Punch

Power-Amplifier (PA) and base-station manufacturers are faced with a series of similar problems. They both have a common interest in keeping base stations cool and minimizing cost. And they each have ...
SDxCentral

Keysight and Point2 testing multiterabit RF interconnects to power AI scale-up

The partnership sees Keysight’s high-speed digital test solutions used to validate Point2’s e-Tube radio frequency (RF)-based ...
Electronic Design

Rating Power Amplifiers for RF Immunity Testing

Over the years, tutorials have appeared in EMC journals explaining how to estimate the power required from a power amplifier intended for use in an RF immunity test system. Little material, if any, ...