A technical paper titled “Characterizing semiconductor devices for all-electric aircraft” was published by researchers at University of Strathclyde (Glasgow) and Airbus UpNext. “Cryogenic propulsion ...
TOKYO, JAPAN. Saki Corp. has announced the introduction of its 3D-CT automated X-ray inspection (AXI) system designed specifically for the inspection and measurement of insulated gate bipolar ...
Power Integrations launched a family of ASIL B-qualified, dual-channel, plug-and-play gate-driver boards for both SiC MOSFETs and silicon IGBTs. At PCIM Europe, Power Integrations announced the SCALE ...
The 1200V / 300A Half-Bridge IGBT is rated for 450A continuous DC current (Tj=90°C) based on Trench Gate Field Stop (TG-FS) technology. And it is housed in the CPAK-EDC package with a copper baseplate ...
Japan's Fuji Electric has launched a new high-power module in its next-core series based on its latest insulated-gate bipolar transistor (IGBT) platform with diodes that feature a free-wheeling diode ...
The 6SD312EI is a small plug-and-play, 6-channel SCALE-1 IGBT driver that is well-matched with of EconoPACK ™ + and compatible modules. This driver has the CONCEPT own SCALE-1 chip set with a market ...