Thanks to their performance characteristics [1], [2], silicon carbide (SiC) power devices are establishing themselves on the market as valid replacements for MOSFETs and IGBTs based on silicon ...
Lexington, Mass. – STMicroelectronics' FDmesh high-volt-age n-channel power MOSFETs are a follow-on to the company's existing MDmesh MOSFET technology, adding a body diode with a short recovery time.
SEOUL, South Korea, May 2, 2023 /PRNewswire/ -- Magnachip Semiconductor Corporation (MX) announced today that the Company has released a new family of 600V Super Junction Metal Oxide Semiconductor ...
MALVERN, Pa., Oct. 05, 2022 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new fourth-generation 600 V EF Series fast body diode MOSFET in the low profile PowerPAK® 10 ...
The L-Series 600-V HEXFET power-MOSFET family's fast-body-diode characteristics are tailored for soft switching applications such as zero-voltage-switching (ZVS) circuits. The ZVS technique maximizes ...
KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation and Toshiba Corporation (collectively “Toshiba”) have developed an SiC metal oxide semiconductor field effect ...
USING TRENCHFET® Gen III silicon, the Si4628DY SkyFET® from Vishay Intertechnology offers a maximum R DS(ON) of 3 mΩ at a 10-V gate drive and 3.8 mΩ at 4.5 V — presented as the industry's lowest ...
Zetex has announced a synchronous rectifier controller for flyback converters. Combined with a discrete power Mosfet, the ZXGD3101T8 ‘zero point detector driver’ replaces Schottky and other diodes to ...
High-Efficiency Buck Converters from Diodes Incorporated Provide Wide-Ranging POL Design Versatility
PLANO, Texas--(BUSINESS WIRE)--Diodes Incorporated (Diodes) (Nasdaq: DIOD) has announced new additions to its synchronous buck converter portfolio. With continuous output current ratings of 5A and 8A ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results